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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1602 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min) high dc current gain : h fe = 1000(min) @i c = 2a complement to type 2sb1102 applications designed for low frequency power amplifiers applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current-continuous 4 a i cp collector current-peak 8 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1602 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma; r be = 80 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce( sat )-1 collector-emitter saturation voltage i c = 2a; i b = 4ma b 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 4a; i b = 40ma b 3.0 v v be( sat )-1 base-emitter saturation voltage i c = 2a; i b = 4ma b 2.0 v v be( sat )-2 base-emitter saturation voltage i c = 4a; i b = 40ma b 3.5 v i cbo collector cutoff current v cb = 60v; i e = 0 100 a i ceo collector cutoff current v ce = 50v; r be = 10 a h fe dc current gain i c = 2a; v ce = 3v 1000 20000 v ecf c-e diode forward voltage i f = 4a 3.0 v switching times t on turn-on time 1.0 s t stg storage time 6.0 s t f fall time i c = 2a, i b1 = -i b2 = 4ma 1.0 s isc website www.iscsemi.cn 2 |
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